Electronic modulating device

ABSTRACT

An electronic modulating device is provided, which includes a first substrate, a second substrate disposed opposing to the first substrate, and a modulating material disposed between the first substrate and the second substrate. The electronic modulating device includes a buffer layer disposed on the first substrate, and a first electrode disposed on the buffer layer. The buffer layer includes a first opening defining a first top edge and a first bottom edge of the buffer layer. The first electrode includes a second opening defining a second top edge and a second bottom edge of the first electrode. The electronic modulating device includes an organic insulating layer disposed on the first electrode and within the first opening and the second opening. The thickness of the organic insulating layer at the second bottom edge is greater than the thickness of the organic insulating layer at the first top edge.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of pending U.S. patent applicationSer. No. 16/281,325, filed Feb. 21, 2019 and entitled “ELECTRONICMODULATING DEVICE”.

BACKGROUND Technical Field

The present disclosure relates to an electronic modulating device, andin particular it relates to an organic insulating layer of theelectronic modulating device.

Description of the Related Art

Electronic products that include a display panel, such as smartphones,tablets, notebook computers, monitors, and TVs, have becomeindispensable necessities in modern society. With the flourishingdevelopment of such portable electronic products, consumers have highexpectations regarding their quality, functionality, and price. Some ofthese electronic products are provided with communications capabilitiesthat depend on modulating structures (e.g., antennas) to operate.

Although existing electronic modulating devices have been adequate fortheir intended purposes, they have not been entirely satisfactory in allrespects. For example, the dielectric loss resulting from the insulatorin the electronic modulating device is an issue. Therefore, at present,there remain problems that need be solved in the technology behindelectronic devices.

SUMMARY

In accordance with some embodiments of the present disclosure, amodulating electronic device is provided. The modulating electronicdevice includes a first substrate, a second substrate disposed opposingto the first substrate and a modulating material disposed between thefirst substrate and the second substrate. The electronic modulatingdevice also includes a buffer layer disposed on the first substrate, anda first electrode disposed on the buffer layer. The buffer layerincludes a first opening defining a first top edge and a first bottomedge of the buffer layer. The first electrode includes a second openingdefining a second top edge and a second bottom edge of the firstelectrode. The electronic modulating device also includes an organicinsulating layer disposed on the first electrode and within the firstopening and the second opening. The thickness of the organic insulatinglayer at the second bottom edge is greater than the thickness of theorganic insulating layer at the first top edge.

In accordance with some other embodiments of the present disclosure, amodulating electronic device is provided. The modulating electronicdevice includes a first substrate, a second substrate disposed opposingto the first substrate and a modulating material disposed between thefirst substrate and the second substrate. The electronic modulatingdevice also includes an electrode disposed on the first substrate, andthe electrode comprising an opening defining a top edge and a bottomedge of the electrode. The opening has a central portion. The electronicmodulating device also includes an organic insulating layer disposed onthe electrode and within the opening. The thickness of the organicinsulating layer at the bottom edge is greater than the thickness of theorganic insulating layer at the central portion.

A detailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1A is a cross-sectional diagram of an electronic modulating devicein accordance with some embodiments of the present disclosure.

FIG. 1B is an enlarged diagram of region A in FIG. 1A in accordance withsome embodiments of the present disclosure.

FIG. 1C is top-view diagram of region A in FIG. 1A in accordance withsome embodiments of the present disclosure.

FIG. 2A is a cross-sectional diagram of an electronic modulating devicein accordance with some embodiments of the present disclosure.

FIG. 2B is an enlarged diagram of region C in FIG. 2A in accordance withsome embodiments of the present disclosure.

FIG. 2C is top-view diagram of region C in FIG. 2A in accordance withsome embodiments of the present disclosure.

FIGS. 3A-3H are top-view diagrams of the opening of the first electrodein accordance with some embodiments of the present disclosure.

FIGS. 4A-4G are cross-sectional diagrams of a portion of the electronicmodulating device in accordance with some embodiments of the presentdisclosure.

FIGS. 5A-5F are cross-sectional diagrams of a portion of the electronicmodulating device in accordance with some embodiments of the presentdisclosure.

FIGS. 6A-6F are enlarged diagrams of region A in FIG. 1A during themanufacturing processes in accordance with some embodiments of thepresent disclosure.

FIGS. 7A-7F are enlarged diagrams of region A in FIG. 1A during themanufacturing processes in accordance with some embodiments of thepresent disclosure.

FIGS. 8A-8D are enlarged diagrams of region C in FIG. 2A during themanufacturing processes in accordance with some embodiments of thepresent disclosure.

FIGS. 9A-9D are enlarged diagrams of region C in FIG. 2A during themanufacturing processes in accordance with some embodiments of thepresent disclosure.

DETAILED DESCRIPTION

The electronic modulating device of the present disclosure and themethod for manufacturing the electronic modulating device are describedin detail in the following description. In the following detaileddescription, for purposes of explanation, numerous specific details andembodiments are set forth in order to provide a thorough understandingof the present disclosure. The specific elements and configurationsdescribed in the following detailed description are set forth in orderto clearly describe the present disclosure. It will be apparent,however, that the exemplary embodiments set forth herein are used merelyfor the purpose of illustration, and the concept of the presentdisclosure may be embodied in various forms without being limited tothose exemplary embodiments. In addition, the drawings of differentembodiments may use like and/or corresponding numerals to denote likeand/or corresponding elements in order to clearly describe the presentdisclosure. However, the use of like and/or corresponding numerals inthe drawings of different embodiments does not suggest any correlationbetween different embodiments.

It should be understood that this description of the exemplaryembodiments is intended to be read in connection with the accompanyingdrawings, which are to be considered part of the entire writtendescription. The drawings are not drawn to scale. In addition,structures and devices are shown schematically in order to simplify thedrawing.

It should be noted that the elements or devices in the drawings of thepresent disclosure may be present in any form or configuration known tothose with ordinary skill in the art. In addition, the expressions “alayer overlying another layer”, “a layer is disposed above anotherlayer”, “a layer is disposed on another layer” and “a layer is disposedover another layer” may indicate that the layer is in direct contactwith the other layer, or that the layer is not in direct contact withthe other layer, there being one or more intermediate layers disposedbetween the layer and the other layer.

In addition, in this specification, relative expressions are used. Forexample, “lower”, “bottom”, “higher” or “top” are used to describe theposition of one element relative to another. It should be appreciatedthat if a device is flipped upside down, an element that is “lower” willbecome an element that is “higher”.

It should be understood that, although the terms first, second, thirdetc. may be used herein to describe various elements, components,regions, layers, portions and/or sections, these elements, components,regions, layers, portions and/or sections should not be limited by theseterms. These terms are only used to distinguish one element, component,region, layer, portion or section from another element, component,region, layer or section. Thus, a first element, component, region,layer, portion or section discussed below could be termed a secondelement, component, region, layer, portion or section without departingfrom the teachings of the present disclosure.

The terms “about” and “substantially” typically mean +/−10% of thestated value, more typically mean +/−5% of the stated value, moretypically +/−3% of the stated value, more typically +/−2% of the statedvalue, more typically +/−1% of the stated value and even more typically+/−0.5% of the stated value. The stated value of the present disclosureis an approximate value. When there is no specific description, thestated value includes the meaning of “about” or “substantially”.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It should be appreciated that,in each case, the term, which is defined in a commonly used dictionary,should be interpreted as having a meaning that conforms to the relativeskills of the present disclosure and the background or the context ofthe present disclosure, and should not be interpreted in an idealized oroverly formal manner unless so defined.

In addition, in some embodiments of the present disclosure, termsconcerning attachments, coupling and the like, such as “connected” and“interconnected,” refer to a relationship wherein structures are securedor attached to one another either directly or indirectly throughintervening structures, as well as both movable or rigid attachments orrelationships, unless expressly described otherwise.

In addition, the phrase “in a range between a first value and a secondvalue” or “ranged from a first value to a second value” indicates thatthe range includes the first value, the second value, and other valuesbetween them.

In accordance with some embodiments of the present disclosure, anelectronic modulating device is provided. The electronic modulatingdevice may include an organic insulating layer having differentthickness according to different positions. The thickness of the organicinsulating layer may be controlled to decrease the dielectric loss ofthe electromagnetic wave or to decrease the amount of metal ionsdiffusing into the modulating material.

FIG. 1A is a cross-sectional diagram of an electronic modulating device10 in accordance with some embodiments of the present disclosure. Itshould be understood that additional features may be added to theelectronic modulating device 10 in accordance with some embodiments ofthe present disclosure. Some of the features of the electronicmodulating device 10 described below may be replaced or omitted inaccordance with some other embodiments of the present disclosure. Inaddition, it should be noted that only a portion of the electronicmodulating device 10 (e.g., a portion of the working area) isillustrated in the figures, and the electronic modulating device 10 mayinclude other structures (e.g., non-working area) depending on needs. Insome embodiments, the electronic modulating device 10 may serve as anantenna, a smartphone, a tablet, a notebook computer, a monitor, a TV,and/or other applicable electronic modulating devices to receive and/ortransmit the electromagnetic wave. In some examples, some components maybe added or eliminated in some of the applications.

Referring to FIG. 1A, the electronic modulating device 10 may include afirst substrate 102, a second substrate 104 and a modulating material106. The second substrate 104 may be disposed opposing to the firstsubstrate 102. The modulating material 106 may be disposed between thefirst substrate 102 and the second substrate 104. Specifically, themodulating material 106 may at least partially fill the space betweenthe first substrate 102 and the second substrate 104. In some examples,the space may be formed by at least one sealant (not illustrated)disposed between the first substrate 102 and the second substrate 104.The modulating material 106 may be the material that can be adjusted topossess different properties (e.g., dielectric coefficients) by applyingan electric field or another method. In some embodiments, the modulatingmaterial 106 may be used to control the transmission of theelectromagnetic wave W (as indicated by an arrow), but it is not limitedthereto.

In some embodiments, the material of the first substrate 102 and thesecond substrate 104 may include, but is not limited to, glass, quartz,sapphire, polycarbonate (PC), polyimide (PI), polyethylene terephthalate(PET), rubber, glass fiber, ceramic, another suitable material, or acombination thereof. In some embodiments, the first substrate 102 andthe second substrate 104 may be a flexible substrate, a rigid substrate,or a combination thereof. In some embodiments, the material of the firstsubstrate 102 may be the same as or different from that of the secondsubstrate 104. In some embodiments, the modulating material 106 mayinclude liquid-crystal molecules, but it is not limited thereto.

In addition, the electronic modulating device 10 may include a bufferlayer 108 disposed on the first substrate 102. The buffer layer 108 maybe disposed between the first substrate 102 and a first electrode 110.In some embodiments, the expansion coefficients of the first substrate102 and the first electrode 110 may be substantially matched through theintermediate buffer layer 108 to reduce the warpage of the firstsubstrate 102. In some embodiments, the buffer layer 108 may include afirst opening 108 p. The first opening 108 p may define a first top edge108 a and a first bottom edge 108 b of the buffer layer 108 (as shown inFIG. 1B). The buffer layer 108 may include a top surface 108S₁ and abottom surface 108S₂. Specifically, the first top edge 108 a may referto the highest point of the edge of the top surface 108S₁ of the bufferlayer 108 in a cross-sectional view.

In some embodiments, the material of the buffer layer 108 may include,but is not limited to, an organic insulating material, an inorganicinsulating material, a metal material, another suitable material, or acombination thereof. The organic insulating material may include, but isnot limited to, an acrylic or methacrylic organic compound, an isoprenecompound, phenol-formaldehyde resin, benzocyclobutene (BCB),perfluorocyclobutane (PECB), polyimide, polyethylene terephthalate(PET), or a combination thereof. The inorganic insulating material mayinclude, but is not limited to, silicon nitride, silicon oxide, orsilicon oxynitride or a combination thereof. The metal material mayinclude, but is not limited to, titanium, molybdenum, tungsten, nickel,aluminum, gold, chromium, platinum, silver, copper, titanium alloys,molybdenum alloys, tungsten alloys, nickel alloys, aluminum alloys, goldalloys, chromium alloys, platinum alloys, silver alloys, copper alloys,another suitable material, or a combination thereof.

Referring to FIG. 1A, the electronic modulating device 10 may includethe first electrode 110 disposed on the buffer layer 108. The firstelectrode 110 may be disposed between the first substrate 102 and thesecond substrate 104. The first electrode 110 may include a secondopening 110 p. The second opening 110 p may define a second top edge 110a and a second bottom edge 110 b of the first electrode 110 (as shown inFIG. 1B). The first electrode 110 may include a top surface 110S₁ and abottom surface 110S₂. Specifically, the second top edge 110 a may referto the highest point of the edge of the top surface 110S₁ of the firstelectrode 110 in a cross-sectional view. In some embodiments, comparedwith the first top edge 108 a of the buffer layer 108, the second bottomedge 110 b of the first electrode 110 may be disposed away from thefirst opening 108 p.

In some embodiments, the first electrode 110 may include a conductivematerial. In some embodiments, the material of the first electrode 110may include, but is not limited to, gold, copper, silver, tin, aluminum,molybdenum, tungsten, chromium, nickel, platinum, gold alloy, copperalloy, silver alloy, tin alloy, aluminum alloy, molybdenum alloy,tungsten alloy, chromium alloy, nickel alloy, platinum alloy, anothersuitable conductive material or a combination thereof. Moreover, in someembodiments, the material of the first electrode 110 may be differentfrom the material of the buffer layer 108.

In addition, the electronic modulating device 10 may include an organicinsulating layer 112 disposed on the first electrode 110 and within thefirst opening 108 p and the second opening 110 p. The organic insulatinglayer 112 may be disposed between the first electrode 110 and themodulating material 106. In some embodiments, the organic insulatinglayer 112 may cover and be in contact with the buffer layer 108 and thefirst electrode 110. In some embodiments, the organic insulating layer112 may be an alignment layer for the modulating material 106.

In particular, the organic insulating layer 112 may have differentthickness within the first opening 108 p and the second opening 110 p todecrease the dielectric loss of the electromagnetic wave or diffusion ofthe metal ions into the modulating material. The configuration of theorganic insulating layer 112, and the buffer layer 108 and the firstelectrode 110 will be described in detail in FIG. 1B.

In some embodiments, the material of the organic insulating layer 112may include, but is not limited to, a polymer (e.g., polyimide, PI), aphenone-based insulating material, another suitable organic insulatingmaterial, or a combination thereof. For example, the phenone-basedinsulating material may include benzophenone, benzophenone,tetracarboxylic dianhydride (BTDA), or phenol formaldehyde resins (PF),but it is not limited thereto. In addition, in some other embodiments,an inorganic insulating layer may be used to replace the organicinsulating layer 112.

Furthermore, the electronic modulating device 10 may further include asecond electrode 114 disposed between the modulating material 106 andthe second substrate 104. In some embodiments, the second electrode 114may overlap the first opening 108 p and the second opening 110 p. Asshown in FIG. 1A, the second electrode 114 may include an opening 114 pin accordance with some embodiments.

Moreover, the organic insulating layer 112 also may be disposed on thesecond electrode 114. In some embodiments, the buffer layer 108 may alsobe disposed between the second electrode 114 and the second substrate104. In addition, region B as illustrated in the figures may havesimilar a configuration (e.g., the thickness of the organic insulatinglayer 112) as region A in accordance with some embodiments.

In addition, the first electrode 110 and/or the second electrode 114 maybe electrically connected to a functional circuit (not illustrated)respectively. The functional circuit may include an active element(e.g., a thin-film transistor (TFT) and/or a chip) or a passive element.In some embodiments, the functional circuit may be disposed on a surface104B of the second substrate 104, where the second electrode 114 isdisposed. In some other embodiments, the functional circuit may bedisposed on a surface 104A of the second substrate 104 that is oppositeto the surface 104B, and the second electrode 114 may be electricallyconnected to the functional circuit. In some examples, the secondelectrode 114 may be electrically connected to the functional circuitthrough a via hole (not illustrated) that penetrates through the secondsubstrate 104. For example, the active driving element may include athin-film transistor (TFT). In some embodiments, the active element maybe integrated with the circuit of a gate on array (GOP) structure. Thepassive element may be controlled by an IC or a microchip disposed in oroutside the electronic modulating device 10.

As described above, the second electrode 114 may include an opening 114p in accordance with some embodiments. More specifically, the secondelectrode 114 may be a patterned electrode with several portions inaccordance with some embodiments. In some embodiments, the severalportions of the second electrode 114 may be connected to differentcircuits.

In accordance with some embodiments, the electronic modulating device 10may further include supporting elements 116 disposed between the firstsubstrate 102 and the second substrate 104. In some embodiments, thesupporting element 116 may be disposed between the first electrode 110and the second electrode 114. The supporting element 116 may providestructural stability for the electronic modulating device 10. In someexamples, the supporting element 116 may be formed on the firstsubstrate 102 or the second substrate 104, but it is not limitedthereto. The organic insulating layer 112 may be formed on thesupporting element 116, the first substrate 102, and/or the secondsubstrate 104.

In some embodiments, the material of the supporting element 116 mayinclude, but is not limited to, dielectric material, metal material,organic material, or a combination thereof. In some embodiments, thedielectric material may include, but is not limited to, silicon oxide,silicon nitride, silicon oxynitride, another high-k dielectric material,or a combination thereof. In some embodiments, the metal material mayinclude, but is not limited to, copper, silver, gold, copper alloy,silver alloy, gold alloy, another suitable metal material, or acombination thereof. In some embodiments, the organic material mayinclude, but is not limited to, polyimide (PI), epoxy resin, acrylicresin (e.g., polymethylmetacrylate (PMMA)), benzocyclobutene (BCB),polyester, polydimethylsiloxane (PDMS), polytetrafluoroethylene (PFA) ora combination thereof.

In addition, in some embodiments, the supporting element 116 mayinclude, but is not limited to, a sealant, a photo spacer, a liquidcrystal polymer (LCP) layer, or a combination thereof. In someembodiments, the supporting element 116 may include a photo-curing orthermal curing sealant. For example, the supporting element 116 mayinclude a photo-curing sealant (UV light or visible light), a thermalcuring sealant, or a photothermal curing sealant.

Next, refer to FIG. 1B, which is an enlarged diagram of region A in FIG.1A in accordance with some embodiments of the present disclosure. Asdescribed above, the organic insulating layer 112 may have differentthickness within the first opening 108 p and the second opening 110 p.It should be noted that the thickness of the organic insulating layer112 described herein refers to the thickness that is measured in thenormal direction of the first substrate 102 (e.g., the Z direction shownin FIG. 1B). More specifically, in some examples, a cross-sectionalimage of the organic insulating layer 112 may be obtained by usingscanning electron microscope (SEM), and then the thickness of theorganic insulating layer 112 may be measured based on thecross-sectional image.

The organic insulating layer 112 may have a first thickness T₁ at thefirst top edge 108 a of the buffer layer 108. The organic insulatinglayer 112 may have a second thickness T₂ at the first bottom edge 108 bof the buffer layer 108. In addition, the organic insulating layer 112may have a third thickness T₃ at the second top edge 110 a of the firstelectrode 110. The organic insulating layer 112 may have a fourththickness T₄ at the second bottom edge 110 b of the first electrode 110.

In some embodiments, the fourth thickness T₄ of the organic insulatinglayer 112 at the second bottom edge 110 b may be greater than the firstthickness T₁ of the organic insulating layer 112 at the first top edge108 a. In some embodiments, the ratio of the first thickness T₁ of theorganic insulating layer 112 to the fourth thickness T₄ of the organicinsulating layer 112 may be greater than zero and less than or equal to0.4, such as 0.35, 0.30, 0.25 or 0.2. The organic insulating layer 112having a thinner thickness (e.g., the first thickness T₁) at the firsttop edge 108 a may not affect the performance of electromagnetic wavesince the dielectric loss resulting from the organic insulating layer112 may be reduced. On the other hand, the organic insulating layer 112having a thicker thickness (e.g., the fourth thickness T₄) at the secondbottom edge 110 b may decrease the amount of the metal ions of the firstelectrode 110 diffusing into the modulating layer 106.

In some embodiments, the fourth thickness T₄ of the organic insulatinglayer 112 at the second bottom edge 110 b may be greater than the thirdthickness T₃ of the organic insulating layer 112 at the second top edge110 a. In some embodiments, the ratio of the third thickness T₃ of theorganic insulating layer 112 to the fourth thickness T₄ of the organicinsulating layer 112 may be greater than zero and less than or equal to0.4, such as 0.35, 0.30, 0.25 or 0.2.

Furthermore, in some embodiments, the thickness of the organicinsulating layer 112 on the top surface 110S₁ of the first electrode 110may be uniform. In other embodiments, the organic insulating layer 112may have a third thickness T₃′ on the top surface 110S₁ other than thesecond top edge 110 a. In some embodiments, the third thickness T₃′ maybe greater than or less than the third thickness T₃ of the organicinsulating layer 112 at the second top edge 110 a.

The third thickness T₃ at the second top edge 110 a may be thinner thanthe fourth thickness T₄ at the second bottom edge 110 b or the thirdthickness T₃′ on the top surface 110S₁, and thereby the intensity of theelectric field consumed at the second top edge 110 a may be reduced.

In some embodiments, the first opening 108 p may include a centralportion 108 c. The central portion 108 c may refer to the region fromwhich the geometric center CT of the first opening 108 p (e.g., as shownin FIG. 1C) extends for a certain distance. In other words, the centralportion 108 c may be a circular area having a certain radius that isaround the geometric center CT of the first opening 108 p. Thedefinition of the central portion 108 c in accordance with variousembodiments will be described later in FIG. 3A.

In addition, the organic insulating layer 112 may have a fifth thicknessT₅ at the central portion 108 c of the first opening 108 p. In someexamples, the fifth thickness T₅ may be the minimum thickness at thecentral portion 108 c of the first opening 108 p. In some embodiment,the second thickness T₂ of the organic insulating layer 112 at the firstbottom edge 108 b may be greater than the fifth thickness T₅ of theorganic insulating layer 112 at the central portion 108 c. In someembodiments, the ratio of the fifth thickness T₅ of the organicinsulating layer 112 to the second thickness T₂ of the organicinsulating layer 112 may be greater than zero and less than or equal to0.3, such as 0.25, 0.2, 0.15, or 0.10.

Moreover, as shown in FIG. 1B, the thickness of the organic insulatinglayer 112 that is within the first opening 108 p may decrease graduallytoward the central portion 108 c. As described above, the organicinsulating layer 112 having a thinner thickness (e.g., the fifththickness T₅) at the central portion 108 c may reduce the dielectricloss resulting from the organic insulating layer 112 (i.e. the amount oforganic insulating layer 112 that the electromagnetic wave needs to passthrough).

Furthermore, in some embodiments, the second thickness T₂ of the organicinsulating layer 112 at the first bottom edge 108 b may be greater thanthe first thickness T₁ of the organic insulating layer 112 at the firsttop edge 108 a. In some embodiments, the ratio of the first thickness T₁of the organic insulating layer 112 to the second thickness T₂ of theorganic insulating layer 112 may be greater than zero and less than orequal to 0.3, such as 0.25, 0.2, 0.15, or 0.10. The second thickness T₂at the first bottom edge 108 b may be thinner than the first thicknessT₁ at the first top edge 108 a and thereby the intensity of the electricfield consumed at the second top edge 110 a may be reduced.

In addition, the first opening 108 p may have a first width di and thesecond opening 110 p may have a second width d₂. In some embodiments,the second width d₂ may be greater than the first width d₁. Inaccordance with some embodiments, the width of the opening may be thedistance between two points on the bottom edges (e.g., first bottom edge108 b) in a cross-sectional view. In addition, the width of the openingmay be the maximum distance of the first opening 108 p or the secondopening 110 p on the plane that is substantially perpendicular to thenormal direction of the first substrate 102, e.g., the X-Y plane, asshown in FIG. 1C.

In some embodiments, a distance d₃ between the second bottom edge 110 band the first top edge 108 a may be in a range from 0 μm to 50 μm (0μm≤d₃≤50 μm), such as from 1 μm to 10 μm (1 μm≤d₃≤10 μm), or from 1 μmto 5 μm (1 μm≤d₃≤5 μm). It should be understood that if the distance d₃between the second bottom edge 110 b and the first top edge 108 a isless than 0 μm, the expansion coefficients of the first substrate 102and the first electrode 110 may not be matched. On the other hand, ifthe distance d₃ between the second bottom edge 110 b and the first topedge 108 a is too large, the dielectric loss resulting from the bufferlayer 108 may be increased.

Next, refer to FIG. 1C, which is top-view diagram of region A in FIG. 1A in accordance with some embodiments of the present disclosure.Moreover, the cross-sectional diagram of the electronic modulatingdevice 10 shown in FIG. 1B is the diagram obtained along line segmentI-I′ shown in FIG. 1C. It should be noted that the organic insulatinglayer 112 is omitted in FIG. 1C for clarity.

As shown in FIG. 1C, in some embodiments, the region of the firstopening 108 p may be defined by the first bottom edge 108 b. The regionof the second opening 110 p may be defined by the second bottom edge 110b. But the present disclosure is not limited thereto. In someembodiments, the region of the second opening 110 p may be greater thanthe region of the first opening 108 p in the top-view perspective. Inaddition, in some embodiments, a radius r of the central portion 108 cmay be greater than zero and less than or equal to 50 μm, such as lessthan or equal to 30 μm, 20 μm, or 10 μm.

Next, refer to FIG. 2A, which is a cross-sectional diagram of anelectronic modulating device 20 in accordance with some otherembodiments of the present disclosure. It should be understood that thesame or similar components or elements in the context of thedescriptions provided above and below are represented by the same orsimilar reference numerals. The materials, manufacturing methods andfunctions of these components or elements are the same as or similar tothose described above, and thus will not be repeated herein.

The electronic modulating device 20 is similar to the electronicmodulating device 10 shown in FIG. 1A. The difference between them isthat the electronic modulating device 20 may not include the bufferlayer 108 with an opening 108 p. As shown in FIG. 2A, the electronicmodulating device 20 may include the first electrode 110 disposed on thefirst substrate 102. In some embodiments, the first electrode 110 may bein contact with the first substrate 102. In some embodiments, the firstsubstrate 102 may have a multilayered structure. For example, the firstsubstrate 102 may include a buffer layer (not illustrated). The bufferlayer may be in contact with the first electrode 110 in accordance withsome embodiments. The buffer layer may be patterned or non-patterned. Inother examples, the first substrate 102 may include a buffer layer notin contact with the first electrode 110. More specifically, the firstsubstrate 102 may include a buffer layer that is not patterned inaccordance embodiments.

The first electrode 110 may include the second opening 110 p. The secondopening 110 p may define the second top edge 110 a and the second bottomedge 110 b of the first electrode 110 (as shown in FIG. 2B). In someembodiments, the second electrode 114 may overlap the second opening 110p.

Moreover, the electronic modulating device 20 may include the organicinsulating layer 112 disposed on the first electrode 110 and within thesecond opening 110 p. In some embodiments, the organic insulating layer112 may cover and be in contact with the first electrode 110. Inparticular, the organic insulating layer 112 may have differentthickness within the second opening 110 p to decrease the dielectricloss of the electromagnetic wave or diffusion of the metal ions into themodulating material.

In addition, the second electrode 114 may include the opening 114 p inaccordance with some embodiments. It should be understood that theopening 114 p (region D as illustrated in figure) may have similarconfiguration (e.g., the thickness of organic insulating layer 112) asthe region C in accordance with some embodiments.

Referring to FIG. 2B, which is an enlarged diagram of region C in FIG.2A in accordance with some embodiments of the present disclosure. Theorganic insulating layer 112 may have the sixth thickness T₆ at thesecond top edge 110 a of the first electrode 110. The organic insulatinglayer 112 may have the seventh thickness T₇ at the second bottom edge110 b of the first electrode 110.

In some embodiments, the seventh thickness T₇ of the organic insulatinglayer 112 at the second bottom edge 110 b may be greater than the sixththickness T₆ of the organic insulating layer 112 at the second top edge110 a. In some embodiments, the ratio of the sixth thickness T₆ of theorganic insulating layer 112 to the seventh thickness T₇ of the organicinsulating layer 112 may be greater than zero and less than or equal to0.4, such as 0.35, 0.30, 0.25 or 0.2.

Furthermore, the thickness of the organic insulating layer 112 on thetop surface 110S₁ of the first electrode 110 may be uniform. In someembodiments, the organic insulating layer 112 may have a sixth thicknessT₆′ on the top surface 110S₁ other than the second top edge 110 a. Insome embodiments, the sixth thickness T₆′ may be greater than or lessthan the sixth thickness T₆ of the organic insulating layer 112 at thesecond top edge 110 a.

The sixth thickness T₆ at the second top edge 110 a may be thinner thanthe seventh thickness T₇ at the second bottom edge 110 b or the sixththickness T₆′ on the top surface 110S₁, and thereby the intensity of theelectric field consumed at the second top edge 110 a may be reduced.

In addition, the second opening 110 p may include a central portion 110c. The organic insulating layer 112 may have an eighth thickness T₈ atthe central portion 110 c of the second opening 110 p. In someembodiment, the seventh thickness T₇ of the organic insulating layer 112at the second bottom edge 110 b may be greater than the eighth thicknessT₈ of the organic insulating layer 112 at the central portion 110 c. Insome embodiments, the ratio of the eighth thickness T₈ of the organicinsulating layer 112 to the seventh thickness T₇ of the organicinsulating layer 112 may be greater than zero and less than or equal to0.3, such as 0.25, 0.2, 0.15, or 0.10.

As shown in FIG. 2B, the thickness of the organic insulating layer 112that is within the second opening 110 p may decrease gradually towardthe central portion 110 c. As described above, the organic insulatinglayer 112 having a thinner thickness (e.g., the eighth thickness T₈) atthe central portion 110 c may reduce the dielectric loss of theelectromagnetic wave from the organic insulating layer 112.

Next, refer to FIG. 2C, which is top-view diagram of region C in FIG. 2Ain accordance with some embodiments of the present disclosure. Moreover,the cross-sectional diagram of the electronic modulating device 20 shownin FIG. 2B is the diagram obtained along line segment T-T′ shown in FIG.2C. It should be noted that the organic insulating layer 112 is omittedin FIG. 2C for clarity.

As shown in FIG. 2C, the region of the second opening 110 p may bedefined by the second bottom edge 110 b. In some embodiments, a radius rof the central portion 110 c may be greater than zero and less than orequal to 50 μm, such as less than or equal to 30 μm, 20 μm, or 10 μm.

Next, refer to FIGS. 3A-3H, which are top-view diagrams of the firstopening 108 p of the buffer layer 108 in accordance with someembodiments of the present disclosure. As shown in FIGS. 3A-3H, thefirst opening 108 p may be patterned to have various shapes. In someembodiments, the first opening 108 p may have a rectangle shape (asshown in FIG. 3A), a square shape (as shown in FIG. 3B), a triangleshape (as shown in FIG. 3C), a pentagonal shape, a hexagonal shape (asshown in FIG. 3D), a heptagonal shape, an octagonal shape, a circularshape (as shown in FIG. 3E), an ellipse shape (as shown in FIG. 3F), anirregular shape (as shown in FIG. 3G), a donut shape (as shown in FIG.3H), another suitable shape, but it is not limited thereto.

In addition, as shown in FIGS. 3A and 3B, the geometric center CT of thefirst opening 108 p that has a rectangle shape or a square shape may bethe intersection point of two diagonals in accordance with someembodiments. In some other embodiments, as shown in FIGS. 3C-3H, for thefirst opening 108 p that has the shape other than rectangle or squareshape, the geometric center CT of such first opening 108 p may be theintersection point of two diagonals of the minimum rectangle or squarethat can encompass the first opening 108 p.

The central portion 108 c may refer to the region from which thegeometric center CT of the first opening 108 p extends for a certaindistance (radius r). In other words, the central portion 108 c may be acircular area having a radius r that is around the geometric center CTof the first opening 108 p. In some embodiments, the radius r of thecentral portion 108 c may be greater than zero and less than or equal to50 μm, such as less than or equal to 30 μm, 20 μm, or 10 μm.

It should be noted that the second opening 110 p may also have thesimilar configuration as that of the first opening 108 p as describedabove in accordance with some embodiments. In addition, the geometriccenter CT and the central portion 110 c of the second opening 110 p maybe defined in the same manner as described above.

Next, refer to FIGS. 4A-4G, which are cross-sectional diagrams of aportion of the electronic modulating device 10 (e.g., region E shown inFIG. 1B) in accordance with some embodiments of the present disclosure.As shown in FIGS. 4A-4G, the organic insulating layer 112 may havedifferent profiles in accordance with various embodiments.

For example, the organic insulating layer 112 disposed within the firstopening 108 p or the second opening 110 p may protrude toward thegeometric center CT of the first opening 108 p or the second opening 110p. In some embodiments, the organic insulating layer 112 may includeprotruding portions 112 t and recessed portions 112 r. In someembodiments, the protruding portion 112 t may have a rounded shape, aflat shape, a curved shape, another suitable shape, or a combinationthereof. In some embodiments, the organic insulating layer 112 on thefirst substrate 102 may have a wave shape. In addition, the slopes ofthe organic insulating layer 112 on the first electrode 110, the bufferlayer 108 and the first substrate 102 may be different. In someembodiments, the slope of the organic insulating layer 112 may bechanged along the profile of the first electrode 110, the buffer layer108 or the first substrate 102.

Next, refer to FIGS. 5A-5F, which are cross-sectional diagrams of aportion of the electronic modulating device 10 (e.g., region E shown inFIG. 1B) in accordance with some embodiments of the present disclosure.As shown in FIGS. 5A-5F, the first electrode 110 and the buffer layer108 may have different profiles in accordance with various embodiments.

For example, as shown in FIGS. 5A-5C, an inner side 110 s of the firstelectrode 110 may have a bent shape, a recessed shape, a wave shape,another suitable shape, or a combination thereof in accordance with someembodiments. The inner side 110 s of the first electrode 110 may be thesidewall of the first electrode 110 that is adjacent to the secondopening 110 p.

In addition, as shown in FIGS. 5D-5F, an inner side 108 s of the bufferlayer 108 may have a bent shape, a recessed shape, a wave shape, anothersuitable shape, or a combination thereof in accordance with someembodiments.

Next, refer to FIGS. 6A-6F, which are enlarged diagrams of region A inFIG. 1A during a method for manufacturing the electronic modulatingdevice 10 in accordance with some embodiments of the present disclosure.It should be understood that, additional operations may be providedbefore, during, or after the processes in the method for manufacturingthe electronic modulating device 10. In some embodiments, some of theoperations described below may be replaced or eliminated. In someembodiments, the order of the operations may be interchangeable.

Referring to FIG. 6A, the first substrate 102 is provided. The bufferlayer 108 and the first electrode 110 may be sequentially formed on thefirst substrate 102. The first electrode 110 may be patterned to formthe second opening 110 p. The second opening 110 p may expose a portionof the top surface 108S₁ of the buffer layer 108.

In some embodiments, the buffer layer 108 may be formed by using achemical vapor deposition (CVD) process, a spin coating process, aprinting process, or a combination thereof. The chemical vapordeposition process may include, but is not limited to, a low-pressurechemical vapor deposition (LPCVD) process, a low-temperature chemicalvapor deposition (LTCVD) process, a rapid thermal chemical vapordeposition (RTCVD) process, a plasma enhanced chemical vapor deposition(PECVD) process, or an atomic layer deposition (ALD) process.

In some embodiments, the first electrode 110 may be formed by using achemical vapor deposition process, a physical vapor deposition process,an electroplating process, an electroless plating process, anothersuitable process, or a combination thereof. The physical vapordeposition process may include, but is not limited to, a sputteringprocess, an evaporation process, or a pulsed laser deposition. Inaddition, in some embodiments, the second opening 110 p may be formed byone or more photolithography processes and etching process. In someembodiments, the photolithography process may include photoresistcoating (e.g., spin coating), soft baking, hard baking, mask aligning,exposure, post-exposure baking, developing the photoresist, rinsing,drying, or another suitable process. In some embodiments, the etchingprocess may include a dry etching process or a wet etching process.

Next, referring to FIG. 6B, the buffer layer 108 may be patterned toform the first opening 108 p. The first opening 108 p may expose aportion of the top surface 102A of the first substrate 102. In addition,the first opening 108 p may be formed by one or more photolithographyprocesses and etching process as described above.

Next, referring to FIG. 6C, the organic insulating layer 112 may beformed on the first electrode 110 and within the first opening 108 p andthe second opening 110 p. In some embodiments, the organic insulatinglayer 112 may be formed on the first electrode 110, the buffer layer 108and the first substrate 102.

In some embodiments, the organic insulating layer 112 may be formed byusing a chemical vapor deposition process, a spin coating process, aprinting process, or a combination thereof.

Next, referring to FIG. 6D and FIG. 6E, the organic insulating layer 112may be patterned to have a desired profile by a photolithographyprocess. As described above, the photolithography process may includephotoresist coating (e.g., spin coating), soft baking, hard baking, maskaligning, exposure, post-exposure baking, developing the photoresist,rinsing, drying, or another suitable process. Specifically, aphotoresist layer 204 may be formed on the organic insulating layer 112,and a mask 202 may be used in the photolithography process in accordancewith some embodiments. In some embodiments, the mask 202 may include ahalftone mask that may offer multiple transmission levels.

As shown in FIG. 6E, a portion of the photoresist layer 204 may beremoved to form a remained photoresist layer 204′ during thephotolithography process. The remained photoresist layer 204′ may bedisposed within a portion of the first opening 108 p and/or the secondopening 110 p. Next, as shown in FIG. 6F, a portion of the organicinsulating layer 112 and/or the remained photoresist layer 204′ may beremoved to form the organic insulating layer 112 with the desiredprofile (e.g., having different thickness within the first opening 108 pand the second opening 110 p). In some embodiments, the remainedphotoresist layer 204′ may be removed by an ashing process or an etchingprocess.

Next, refer to FIGS. 7A-7F, which are enlarged diagrams of region A inFIG. 1A during a method for manufacturing the electronic modulatingdevice 10 in accordance with some other embodiments of the presentdisclosure. The processes shown in FIG. 7A-7F are similar to those shownin FIG. 6A-6F. The difference between them is that, as shown in FIG. 7D,the mask 202′ used in the photolithography process may include a fulltone mask that may offer a single transmission level. As shown in FIG.7E, in this embodiment, the remained photoresist layer 204′ may bedisposed on the top surface 110S₁ of the first electrode 110. In someembodiments, the remained photoresist layer 204′ may not be disposedwithin the first opening 108 p and/or the second opening 110 p dependingon the desired profile of the organic insulating layer 112.

Next, refer to FIGS. 8A-8D, which are enlarged diagrams of region C inFIG. 2A during a method for manufacturing the electronic modulatingdevice 20 in accordance with some embodiments of the present disclosure.It should be understood that, additional operations may be providedbefore, during, and after the processes in the method for manufacturingthe electronic modulating device 20. In some embodiments, some of theoperations described below may be replaced or eliminated. In someembodiments, the order of the operations may be interchangeable.

Referring to FIG. 8A, the first substrate 102 is provided. The firstelectrode 110 may be sequentially formed on the first substrate 102. Thefirst electrode 110 may be patterned to form the second opening 110 p.The second opening 110 p may expose a portion of the top surface 102A ofthe first substrate 102. Thereafter, the organic insulating layer 112may be formed on the first electrode 110 and within the second opening110 p. In some embodiments, the organic insulating layer 112 mayconformally formed on the first electrode 110 and the first substrate102.

The processes for forming the first electrode 110 and the organicinsulating layer 112 may be similar to those described above, and thusare not repeated herein.

Next, referring to FIG. 8B and FIG. 8C, the organic insulating layer 112may be patterned to have a desired profile by a photolithographyprocess. Specifically, a photoresist layer 204 may be formed on theorganic insulating layer 112, and a mask 202 may be used in thephotolithography process in accordance with some embodiments. In someembodiments, the mask 202 may include a halftone mask that may offermultiple transmission levels.

As shown in FIG. 8C, a portion of the photoresist layer 204 may beremoved to form a remained photoresist layer 204′ during thephotolithography process. The remained photoresist layer 204′ may bedisposed within a portion of the second opening 110 p. Next, as shown inFIG. 8D, a portion of the organic insulating layer 112 and/or theremained photoresist layer 204′ may be removed to form the organicinsulating layer 112 with the desired profile (e.g., having differentthickness within the second opening 110 p). In some embodiments, theremained photoresist layer 204′ may be removed by an ashing process oran etching process.

Next, refer to FIGS. 9A-9D, which are enlarged diagrams of region C inFIG. 2A during a method for manufacturing the electronic modulatingdevice 20 in accordance with some other embodiments of the presentdisclosure. The processes shown in FIG. 9A-9D are similar to those shownin FIG. 8A-8D. The difference between them is that, as shown in FIG. 9B,the mask 202′ used in the photolithography process may include a fulltone mask that may offer a single transmission level. As shown in FIG.9C, in this embodiment, the remained photoresist layer 204′ may bedisposed on the top surface 110S₁ of the first electrode 110. In thisembodiment, the remained photoresist layer 204′ may not be disposedwithin the second opening 110 p.

To summarize the above, in accordance with some embodiments of thepresent disclosure, an electronic modulating device is provided. Theelectronic modulating device may include an organic insulating layerhaving different thickness within the opening defined by the bufferlayer or the electrode. The thickness of the organic insulating layermay be controlled to decrease the dielectric loss of the electromagneticwave or to prevent metal ions of the electrode from diffusing into themodulating material.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. For example, it will be readily understood by one ofordinary skill in the art that many of the features, functions,processes, and materials described herein may be varied while remainingwithin the scope of the present disclosure. Moreover, the scope of thepresent application is not intended to be limited to the particularembodiments of the process, machine, manufacture, composition of matter,means, methods and steps described in the specification. As one ofordinary skill in the art will readily appreciate from the presentdisclosure, processes, machines, manufacture, compositions of matter,means, methods, or steps, presently existing or later to be developed,that perform substantially the same function or achieve substantiallythe same result as the corresponding embodiments described herein may beutilized according to the present disclosure. Accordingly, the appendedclaims are intended to include within their scope such processes,machines, manufacture, compositions of matter, means, methods, or steps.

What is claimed is:
 1. An electronic modulating device, comprising: asubstrate; a buffer layer disposed on the substrate, and the bufferlayer comprising a first opening defining a first top edge and a firstbottom edge of the buffer layer; and an electrode disposed on the bufferlayer, and the electrode comprising a second opening defining a secondtop edge and a second bottom edge of the electrode, wherein in across-sectional view, a minimum distance between the second bottom edgeand the first top edge is in a range from 1 μm to 50 μm.
 2. Theelectronic modulating device as claimed in claim 1, wherein theelectrode has a first inner side and at least a portion of the firstinner side is uneven.
 3. The electronic modulating device as claimed inclaim 2, wherein the at least a portion of the first inner side has abent shape.
 4. The electronic modulating device as claimed in claim 2,wherein the at least a portion of the first inner side has a recessedshape.
 5. The electronic modulating device as claimed in claim 2,wherein the at least a portion of the first inner side has a wave shape.6. The electronic modulating device as claimed in claim 1, wherein thebuffer layer has a second inner side and at least a portion of thesecond inner side is uneven.
 7. The electronic modulating device asclaimed in claim 6, wherein the at least a portion of the second innerside has a bent shape.
 8. The electronic modulating device as claimed inclaim 6, wherein the at least a portion of the second inner side has arecessed shape.
 9. The electronic modulating device as claimed in claim6, wherein the at least a portion of the second inner side has a waveshape.
 10. The electronic modulating device as claimed in claim 1,further comprising an insulating layer disposed on the electrode andwithin the first opening and the second opening, wherein a thickness ofthe insulating layer at the second bottom edge is greater than athickness of the insulating layer at the first top edge.
 11. Anelectronic modulating device, comprising: a first substrate; anelectrode disposed on the first substrate, wherein the electrodecomprises an opening defining a top edge and a bottom edge of theelectrode, and the opening has a central portion; and an insulatinglayer disposed on the electrode and within the opening; wherein athickness of the insulating layer at the bottom edge is greater than athickness of the insulating layer at the central portion.
 12. Theelectronic modulating device as claimed in claim 11, further comprisinga second substrate, wherein the second substrate is disposed opposing tothe first substrate.
 13. The electronic modulating device as claimed inclaim 12, further comprising a modulating material, wherein themodulating material is disposed between the first substrate and secondsubstrate.
 14. The electronic modulating device as claimed in claim 11,wherein the thickness of the insulating layer at the bottom edge isgreater than a thickness of the insulating layer at the top edge. 15.The electronic modulating device as claimed in claim 11, wherein athickness of the insulating layer within the opening decreases graduallytoward the central portion.
 16. The electronic modulating device asclaimed in claim 11, wherein a ratio of the thickness of the insulatinglayer at the central portion to the thickness of the insulating layer atthe bottom edge is greater than zero and less than or equal to 0.3. 17.The electronic modulating device as claimed in claim 14, wherein a ratioof the thickness of the insulating layer at the top edge to thethickness of the insulating layer at the bottom edge is greater thanzero and less than or equal to 0.3.
 18. The electronic modulating deviceas claimed in claim 11, further comprising a buffer layer disposedbetween the first substrate and the insulating layer.
 19. The electronicmodulating device as claimed in claim 11, wherein a radius of thecentral portion is greater than zero and less than or equal to 50 μm.20. The electronic modulating device as claimed in claim 11, furthercomprising a supporting element disposed between the first substrate andthe second substrate.